M. Nafria : rechercher sur Z-Library

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Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale

M. Lanza, M. Porti, M. Nafría, X. Aymerich, G. Ghidini, A. Sebastiani

Journal:

Microelectronics Reliability

Année:

2009

Langue:

english

Fichier:

PDF, 443 KB

english, 2009

Cryo-Electron Microscopy: Moving Beyond X-Ray Crystal Structures for Drug Receptors and Drug Development

García-Nafría, Javier, Tate, Christopher G.

Journal:

Annual Review of Pharmacology

Année:

2020

Langue:

english

Fichier:

PDF, 6.23 MB

english, 2020

Fine-Tuning Mybl2 Is Required for Proper Mesenchymal-to-Epithelial Transition during Somatic Reprogramming

Ward, Carl, Volpe, Giacomo, Cauchy, Pierre, Ptasinska, Anetta, Almaghrabi, Ruba, Blakemore, Daniel, Nafria, Monica, Kestner, Doris, Frampton, Jon, Murphy, George, Buganim, Yosef, Kaji, Keisuke, García

Journal:

Cell Reports

Année:

2018

Langue:

english

Fichier:

PDF, 4.74 MB

english, 2018

Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs

J. Martín-Martínez, S. Gerardin, R. Rodríguez, M. Nafría, X. Aymerich, A. Cester, A. Paccagnella, G. Ghidini

Journal:

Microelectronics Reliability

Année:

2007

Langue:

english

Fichier:

PDF, 634 KB

english, 2007

SPICE modelling of hot-carrier degradation in Si1–xGex S/D and HfSiON based pMOS transistors

J. Martin-Martinez, E. Amat, M.B. Gonzalez, P. Verheyen, R. Rodríguez, M. Nafría, X. Aymerich, E. Simoen

Journal:

Microelectronics Reliability

Année:

2010

Langue:

english

Fichier:

PDF, 504 KB

english, 2010

FinFET and MOSFET preliminary comparison of gate oxide reliability

R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich, B. Kaczer, G. Groeseneken

Journal:

Microelectronics Reliability

Année:

2006

Langue:

english

Fichier:

PDF, 286 KB

english, 2006

Two-step stress method for the dynamic testing of very thin (8 nm) SiO2 films

R. Rodríguez, E. Miranda, M. Nafría, J. Suñé, X. Aymerich

Journal:

Microelectronics Reliability

Année:

1998

Langue:

english

Fichier:

PDF, 376 KB

english, 1998

A common framework for soft and hard breakdown in ultrathin oxides based on the theory of point contact conduction

E Miranda, J Suñé, R Rodríguez, M Nafría, X Aymerich

Journal:

Microelectronic Engineering

Année:

1999

Langue:

english

Fichier:

PDF, 309 KB

english, 1999

Model-independent determination of the degradation dynamics of thin SiO2 films

R. Rodríguez, M. Nafría, E. Miranda, J. Suñé, X. Aymerich

Journal:

Microelectronics Reliability

Année:

1999

Langue:

english

Fichier:

PDF, 323 KB

english, 1999

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures

V. Iglesias, M. Lanza, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, L.F. Liu, J.F. Kang, G. Bersuker, K. Zhang, Z.Y. Shen

Journal:

Microelectronics Reliability

Année:

2012

Langue:

english

Fichier:

PDF, 894 KB

english, 2012

Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks

Amat, E., Kauerauf, T., Degraeve, R., De Keersgieter, A., Rodriguez, R., Nafria, M., Aymerich, X., Groeseneken, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2009

Langue:

english

Fichier:

PDF, 287 KB

english, 2009

RELAB: a tool to include MOSFETs variability, BTI aging and dielectric breakdown in SPICE simulators

Martin-Martinez, J., Moras, M., Rodriguez, R., Nafria, M., Aymerich, X.

Journal:

Analog Integrated Circuits and Signal Processing

Année:

2014

Langue:

english

Fichier:

PDF, 1.53 MB

english, 2014

New Weighted Time Lag Method for the Analysis of Random Telegraph Signals

Martin-Martinez, Javier, Diaz, Javier, Rodriguez, Rosana, Nafria, Montserrat, Aymerich, Xavier

Journal:

IEEE Electron Device Letters

Année:

2014

Langue:

english

Fichier:

PDF, 1.11 MB

english, 2014

Negative Bias Temperature Instabilities induced in devices with millisecond anneal for ultra-shallow junctions

Moras, M., Martin-Martinez, J., Rodriguez, R., Nafria, M., Aymerich, X., Simoen, E.

Journal:

Solid-State Electronics

Année:

2014

Langue:

english

Fichier:

PDF, 1.44 MB

english, 2014

Gate Voltage Influence on the Channel Hot-Carrier Degradation of High-$k$ -Based Devices

Amat, Esteve, Kauerauf, Thomas, Degraeve, Robin, Rodriguez, Rosana, Nafria, Montserrat, Aymerich, Xavier, Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2011

Langue:

english

Fichier:

PDF, 363 KB

english, 2011

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain

Amat, E., Rodriguez, R., Gonzalez, M.B., Martin-Martinez, J., Nafria, M., Aymerich, X., Machkaoutsan, V., Bauer, M., Verheyen, P., Simoen, E.

Année:

2010

Langue:

english

Fichier:

PDF, 338 KB

english, 2010

Monitoring defects in III–V materials: A nanoscale CAFM study

Iglesias, V., Wu, Q., Porti, M., Nafría, M., Bersuker, G., Cordes, A.

Journal:

Microelectronic Engineering

Année:

2015

Langue:

english

Fichier:

PDF, 2.55 MB

english, 2015

[IEEE 2020 IEEE International Reliability Physics Symposium (IRPS) - Dallas, TX, USA (2020.4.28-2020.5.30)] 2020 IEEE International Reliability Physics Symposium (IRPS) - Experimental Monitoring of Aging in CMOS RF Linear Power Amplifiers: Correlation Between Device and Circuit Degradation

Rodriguez, Rosana, Crespo-Yepes, Albert, Martin-Martinez, Javier, Nafria, Montserrat, Aragones, Xavier, Mateo, Diego, Barajas, Enrique

Année:

2020

Fichier:

PDF, 1.07 MB

2020

Reversible dielectric breakdown of thin gate oxides in MOS devices

J. Suñé, M. Nafría, X. Aymerich

Journal:

Microelectronics Reliability

Année:

1993

Langue:

english

Fichier:

PDF, 493 KB

english, 1993

High field dynamic stress of thin SiO2 films

M. Nafría, J. Suñé, D. Yélamos, X. Aymerich

Journal:

Microelectronics Reliability

Année:

1995

Langue:

english

Fichier:

PDF, 600 KB

english, 1995

Breakdown of thin gate silicon dioxide films—A review

M. Nafría, J. Suñé, X. Aymerich

Journal:

Microelectronics Reliability

Année:

1996

Langue:

english

Fichier:

PDF, 1.41 MB

english, 1996

Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale

L. Aguilera, M. Porti, M. Nafría, X. Aymerich

Journal:

Microelectronics Reliability

Année:

2005

Langue:

english

Fichier:

PDF, 393 KB

english, 2005

Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror

J. Martín-Martínez, R. Rodríguez, M. Nafría, X. Aymerich, J.H. Stathis

Journal:

Microelectronics Reliability

Année:

2007

Langue:

english

Fichier:

PDF, 160 KB

english, 2007

Influence of the manufacturing process on the electrical properties of thin (

M. Lanza, M. Porti, M. Nafria, G. Benstetter, W. Frammelsberger, H. Ranzinger, E. Lodermeier, G. Jaschke

Journal:

Microelectronics Reliability

Année:

2007

Langue:

english

Fichier:

PDF, 1.66 MB

english, 2007

Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses

A. Crespo-Yepes, J. Martin-Martinez, R. Rodriguez, M. Nafria, X. Aymerich

Journal:

Microelectronics Reliability

Année:

2009

Langue:

english

Fichier:

PDF, 369 KB

english, 2009

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

M. Lanza, M. Porti, M. Nafría, X. Aymerich, E. Whittaker, B. Hamilton

Journal:

Microelectronics Reliability

Année:

2010

Langue:

english

Fichier:

PDF, 493 KB

english, 2010

Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions

E. Amat, R. Rodríguez, M. Nafría, X. Aymerich, J.H. Stathis

Journal:

Microelectronics Reliability

Année:

2007

Langue:

english

Fichier:

PDF, 144 KB

english, 2007

Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors

Polspoel, W., Vandervorst, W., Aguilera, L., Porti, M., Nafria, M., Aymerich, X.

Journal:

Microelectronics Reliability

Année:

2008

Langue:

english

Fichier:

PDF, 627 KB

english, 2008

Analysis of the evolution of the trapped charge distributions in 10nm SiO2 films during DC and bipolar dynamic stress

R. Rodriguez, M. Nafria, J. Suñe, X. Aymerich

Journal:

Microelectronics Reliability

Année:

1997

Langue:

english

Fichier:

PDF, 305 KB

english, 1997

Grain boundary-driven leakage path formation in HfO2 dielectrics

G. Bersuker, J. Yum, L. Vandelli, A. Padovani, L. Larcher, V. Iglesias, M. Porti, M. Nafría, K. McKenna, A. Shluger, P. Kirsch, R. Jammy

Journal:

Solid-State Electronics

Année:

2011

Langue:

english

Fichier:

PDF, 1.16 MB

english, 2011

Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs

A. Crespo-Yepes, J. Martin-Martinez, A. Rothschild, R. Rodriguez, M. Nafria, X. Aymerich

Journal:

Solid-State Electronics

Année:

2011

Langue:

english

Fichier:

PDF, 581 KB

english, 2011

Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

Miranda, E., Sune, J., Rodriguez, R., Nafria, M., Aymerich, X., Fonseca, L., Campabadal, F.

Journal:

IEEE Transactions on Electron Devices

Année:

2000

Langue:

english

Fichier:

PDF, 190 KB

english, 2000

Analysis of the degradation and breakdown of thin SiO2 films under static and dynamic tests using a two-step stress procedure

Rodriguez, R., Nafria, M., Miranda, E., Sune, J., Aymerich, X.

Journal:

IEEE Transactions on Electron Devices

Année:

2000

Langue:

english

Fichier:

PDF, 121 KB

english, 2000

Metal oxide resistive memory switching mechanism based on conductive filament properties

Bersuker, G., Gilmer, D. C., Veksler, D., Kirsch, P., Vandelli, L., Padovani, A., Larcher, L., McKenna, K., Shluger, A., Iglesias, V., Porti, M., Nafria, M.

Journal:

Journal of Applied Physics

Année:

2011

Langue:

english

Fichier:

PDF, 3.53 MB

english, 2011

Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs

N. Ayala, J. Martin-Martinez, R. Rodriguez, M.B. Gonzalez, M. Nafria, X. Aymerich, E. Simoen

Journal:

Microelectronics Reliability

Année:

2012

Langue:

english

Fichier:

PDF, 403 KB

english, 2012

The South American Species of Aphis (Hemiptera: Aphididae: Aphidina) Living on Rhamnaceae And Loranthaceae, with Description of A New Species

Nieto Nafría, J. M., Ortego, J., Mier Durante, M. P.

Journal:

Proceedings of the Entomological Society of Washington

Année:

2008

Langue:

english

Fichier:

PDF, 1.46 MB

english, 2008

Electrical and mechanical performance of graphene sheets exposed to oxidative environments

Lanza, Mario, Wang, Yan, Gao, Teng, Bayerl, Albin, Porti, Marc, Nafria, Montserrat, Zhou, Yangbo, Jing, Guangyin, Zhang, Yanfeng, Liu, Zhongfan, Yu, Dapeng, Duan, Huiling

Journal:

Nano Research

Année:

2013

Langue:

english

Fichier:

PDF, 1008 KB

english, 2013

A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture

Martin-Martinez, J., Almudever, C.G., Crespo-Yepes, A., Rodriguez, R., Nafria, M., Rubio, A.

Journal:

Microelectronics Reliability

Année:

2014

Langue:

english

Fichier:

PDF, 2.20 MB

english, 2014

Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

Crespo-Yepes, A., Martín-Martínez, J., Rodríguez, R., Nafría, M., Aymerich, X.

Journal:

Microelectronics Reliability

Année:

2013

Langue:

english

Fichier:

PDF, 1.26 MB

english, 2013

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

Bayerl, Albin, Lanza, Mario, Aguilera, Lidia, Porti, Marc, Nafría, Montserrat, Aymerich, Xavier, Gendt, Stefan de

Journal:

Microelectronics Reliability

Année:

2013

Langue:

english

Fichier:

PDF, 1.18 MB

english, 2013

Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs

Velayudhan, V., Gamiz, F., Martin-Martinez, J., Rodriguez, R., Nafria, M., Aymerich, X.

Journal:

Microelectronics Reliability

Année:

2013

Langue:

english

Fichier:

PDF, 1.11 MB

english, 2013

[IEEE ESSDERC 2010 - 40th European Solid State Device Research Conference - Sevilla, Spain (2010.09.14-2010.09.16)] 2010 Proceedings of the European Solid State Device Research Conference - Grain boundary-driven leakage path formation in HfO2 dielectrics

Bersuker, G., Yum, J., Iglesias, V., Porti, M., Nafria, M., McKenna, K., Shluger, A., Kirsch, P., Jammy, R.

Année:

2010

Langue:

english

Fichier:

PDF, 560 KB

english, 2010

Failure physics of ultra-thin SiO 2 gate oxides near their scaling limit

Suñé, J, Nafría, M, Miranda, E, Oriols, X, Rodríguez, R, Aymerich, X

Journal:

Semiconductor Science and Technology

Année:

2000

Langue:

english

Fichier:

PDF, 158 KB

english, 2000

Competing Degradation Mechanisms in Short-Channel Transistors Under Channel Hot-Carrier Stress at Elevated Temperatures

Amat, E., Kauerauf, T., Degraeve, R., Rodriguez, R., Nafria, M., Aymerich, X., Groeseneken, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2009

Langue:

english

Fichier:

PDF, 263 KB

english, 2009

Circuit Design-Oriented Stochastic Piecewise Modeling of the Postbreakdown Gate Current in MOSFETs: Application to Ring Oscillators

Martin-Martinez, Javier, Kaczer, Ben, Degraeve, Robin, Roussel, Philippe J., Rodriguez, Rosana, Nafria, Montserrat, Aymerich, Xavier, Dierickx, B., Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2012

Langue:

english

Fichier:

PDF, 749 KB

english, 2012

Injected Charge to Recovery as a Parameter to Characterize the Breakdown Reversibility of Ultrathin HfSiON Gate Dielectric

Crespo-Yepes, Albert, Martin-Martinez, Javier, Rothschild, Aude, Rodriguez, Rosana, Nafria, Montserrat, Aymerich, Xavier

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2011

Langue:

english

Fichier:

PDF, 429 KB

english, 2011

Time-Dependent Variability Related to BTI Effects in MOSFETs: Impact on CMOS Differential Amplifiers

Martin-Martinez, J., Rodriguez, R., Nafria, M., Aymerich, X.

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2009

Langue:

english

Fichier:

PDF, 515 KB

english, 2009

Combined Nanoscale and Device-Level Degradation Analysis of $\hbox{SiO}_{2}$ Layers of MOS Nonvolatile Memory Devices

Lanza, M., Porti, M., Nafria, M., Aymerich, X., Sebastiani, A., Ghidini, G., Vedda, A., Fasoli, M.

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2009

Langue:

english

Fichier:

PDF, 726 KB

english, 2009

A New Genus and Species of Asteraceae-Inhabiting Aphid (Hemiptera: Aphididae) from Costa Rica and Mexico

Durante, M. Pilar Mier, Hidalgo, Nicolás Pérez, Martínez-Torres, David, García-Tejero, Sergio, Martínez, Rebeca Peña, Nafría, Juan M. Nieto

Journal:

Florida Entomologist

Année:

2013

Fichier:

PDF, 298 KB

2013

Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures

Bayerl, Albin, Lanza, Mario, Porti, Marc, Nafria, Montserrat, Aymerich, Xavier, Campabadal, F., Benstetter, Günther

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2011

Langue:

english

Fichier:

PDF, 738 KB

english, 2011